{"title":"A novel transimpedance amplifier with variable gain","authors":"P. Monsurrò, A. Trifiletti, T. Ytterdal","doi":"10.1109/NORCHIP.2010.5669441","DOIUrl":null,"url":null,"abstract":"In this paper we propose a variable-gain transimpedance amplifier suitable for low-power applications. Its noise, bandwidth and input impedance performance are similar to a more conventional regulated-cascode common-gate transimpedance with resistive load, with the same power consumption and gain performance. The proposed amplifier has, however, variable gain, which can be easily changed by setting a control voltage. Besides, it uses no passive components and can thus occupy less space in the layout, a feature of interest in applications which require the use of many sensors. With 30µW dissipation, it achieves 800MHz performance with 50fF input and output loads, in a 65nm CMOS technology. The transimpedance gain is 68dB, and the input impedance is 180Ω.","PeriodicalId":292342,"journal":{"name":"NORCHIP 2010","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NORCHIP 2010","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHIP.2010.5669441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper we propose a variable-gain transimpedance amplifier suitable for low-power applications. Its noise, bandwidth and input impedance performance are similar to a more conventional regulated-cascode common-gate transimpedance with resistive load, with the same power consumption and gain performance. The proposed amplifier has, however, variable gain, which can be easily changed by setting a control voltage. Besides, it uses no passive components and can thus occupy less space in the layout, a feature of interest in applications which require the use of many sensors. With 30µW dissipation, it achieves 800MHz performance with 50fF input and output loads, in a 65nm CMOS technology. The transimpedance gain is 68dB, and the input impedance is 180Ω.