{"title":"Highly moisture resistant IGZO films with a barrier layer for flexible transparent conductive substrates","authors":"K. Nagamoto, Tsutomu Hara, H. Sakuma, K. Ishii","doi":"10.1109/ICSJ.2014.7009601","DOIUrl":null,"url":null,"abstract":"Structural, electrical and moisture resistant properties of highly transparent conductive polycrystalline Ga and In co-doped ZnO (IGZO) films deposited on high gas barrier plastic substrates and alkali-free glass at below 100 °C by DC magnetron sputtering method were investigated. All the IGZO films in the Ga2O3 concentration is 5.7 wt% (ceramic target) and In2O3 concentration changed from 0 to 20 wt % (ceramic target). We have been studying for the effect of additional In2O3 on moisture resistant of IGZO films. Moisture resistant results showed that when the In2O3 concentration was 10 wt % (ceramic target) was drastically improved compared to GZO films. In addition, the IGZO film applied to the flexible high gas barrier plastic substrate. This plastic flexible IGZO films also showed the excellent moisture resistant. The moisture resistant IGZO film deposited on plastic flexible gas barrier substrates have great potential for use as electrode of flexible sensors, display, lighting and solar cells.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE CPMT Symposium Japan 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSJ.2014.7009601","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Structural, electrical and moisture resistant properties of highly transparent conductive polycrystalline Ga and In co-doped ZnO (IGZO) films deposited on high gas barrier plastic substrates and alkali-free glass at below 100 °C by DC magnetron sputtering method were investigated. All the IGZO films in the Ga2O3 concentration is 5.7 wt% (ceramic target) and In2O3 concentration changed from 0 to 20 wt % (ceramic target). We have been studying for the effect of additional In2O3 on moisture resistant of IGZO films. Moisture resistant results showed that when the In2O3 concentration was 10 wt % (ceramic target) was drastically improved compared to GZO films. In addition, the IGZO film applied to the flexible high gas barrier plastic substrate. This plastic flexible IGZO films also showed the excellent moisture resistant. The moisture resistant IGZO film deposited on plastic flexible gas barrier substrates have great potential for use as electrode of flexible sensors, display, lighting and solar cells.
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