Lifetime prediction of IGBT modules based on linear damage accumulation

Abstract

In this paper, the lifetime prediction of power device modules based on the linear damage accumulation in conjunction with real mission profile assessment is studied. Four tests are performed under two superimposed power cycling conditions using an advanced power cycling test setup with 600 V, 30 A, 3-phase molded IGBT modules. The superimposed power cycling conditions are made based on a new lifetime model in respect to junction temperature swing duration, which has been developed based on 39 power cycling test results. The experimental results validate the lifetime prediction of the IGBT modules based on the linear damage accumulation by comparing it with the predicted lifetime from the lifetime model.