{"title":"A new fully differential second generation current controlled convey or using FG-MOS","authors":"R. Fani, E. Farshidi","doi":"10.1109/IRANIANCEE.2012.6292314","DOIUrl":null,"url":null,"abstract":"This paper presents a new fully differential current controlled conveyor (FDCCCII) based on differential pair topology, which employs floating gate MOS transistors (FG-MOS). It uses floating gate MOSFETs at the input stage and has rail to rail structure. It operates with low supply voltage (±0.8v), low power consumption (lower than 600μw), and with wide range parasitic resistance (Rx). Simulation results by Hspice confirm validity of the proposed circuit.","PeriodicalId":308726,"journal":{"name":"20th Iranian Conference on Electrical Engineering (ICEE2012)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"20th Iranian Conference on Electrical Engineering (ICEE2012)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRANIANCEE.2012.6292314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper presents a new fully differential current controlled conveyor (FDCCCII) based on differential pair topology, which employs floating gate MOS transistors (FG-MOS). It uses floating gate MOSFETs at the input stage and has rail to rail structure. It operates with low supply voltage (±0.8v), low power consumption (lower than 600μw), and with wide range parasitic resistance (Rx). Simulation results by Hspice confirm validity of the proposed circuit.
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