H. Pues, Ben Brike, C. Gazda, P. Teichmann, K. Stijnen, Christian Peeters, A. Durier, D. Ginste
{"title":"Translation of automotive module RF immunity test limits into equivalent IC test limits using S-parameter IC models","authors":"H. Pues, Ben Brike, C. Gazda, P. Teichmann, K. Stijnen, Christian Peeters, A. Durier, D. Ginste","doi":"10.1109/EMCCOMPO.2013.6735209","DOIUrl":null,"url":null,"abstract":"A method to translate immunity specifications of automotive modules into equivalent requirements at integrated circuit (IC) level, using linear scattering parameter models of the ICs, is presented. A technique is described to determine S-parameters of ICs by simulations based on back-annotated analog schematics. The simulation results are compared with measurement data obtained using a specially designed test board. As an example, simulation and measurement results are given for the input stage of an automotive sensor interface. A good agreement is obtained from the lowest test frequency up to 1 GHz. Above this value, the measured results seem to be dominated by package effects.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"154 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCCOMPO.2013.6735209","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A method to translate immunity specifications of automotive modules into equivalent requirements at integrated circuit (IC) level, using linear scattering parameter models of the ICs, is presented. A technique is described to determine S-parameters of ICs by simulations based on back-annotated analog schematics. The simulation results are compared with measurement data obtained using a specially designed test board. As an example, simulation and measurement results are given for the input stage of an automotive sensor interface. A good agreement is obtained from the lowest test frequency up to 1 GHz. Above this value, the measured results seem to be dominated by package effects.