Pub Date : 2013-12-01DOI: 10.1109/emccompo.2013.6735166
U. Paoletti, T. Suga
The main features of the printed reverberation board are revised and the methodology to extract an LSI noise model for electromagnetic radiation estimation at frequencies above 1 GHz with the printed reverberation board is presented. A test PCB has been designed and fabricated to verify the feasibility of the method. Measurement results are presented and discussed for two variations of the model: the deterministic and the random LSI models.
{"title":"Extraction of deterministic and random LSI noise models with the printed reverberation board","authors":"U. Paoletti, T. Suga","doi":"10.1109/emccompo.2013.6735166","DOIUrl":"https://doi.org/10.1109/emccompo.2013.6735166","url":null,"abstract":"The main features of the printed reverberation board are revised and the methodology to extract an LSI noise model for electromagnetic radiation estimation at frequencies above 1 GHz with the printed reverberation board is presented. A test PCB has been designed and fabricated to verify the feasibility of the method. Measurement results are presented and discussed for two variations of the model: the deterministic and the random LSI models.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114929162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/EMCCOMPO.2013.6735190
N. Berbel, R. Fernández-García, I. Gil
In this paper, the characterization of the EMC conducted emissions of integrated circuits under different temperature stress condition, up to 3 GHz is presented. The impact of high temperature has been measured on the input impedance of propagation paths of the electromagnetic conducted emissions, as well as on the electromagnetic noise of a clock generator.
{"title":"Characterization of conducted emission at high frequency under different temperature","authors":"N. Berbel, R. Fernández-García, I. Gil","doi":"10.1109/EMCCOMPO.2013.6735190","DOIUrl":"https://doi.org/10.1109/EMCCOMPO.2013.6735190","url":null,"abstract":"In this paper, the characterization of the EMC conducted emissions of integrated circuits under different temperature stress condition, up to 3 GHz is presented. The impact of high temperature has been measured on the input impedance of propagation paths of the electromagnetic conducted emissions, as well as on the electromagnetic noise of a clock generator.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"242 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114051852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/EMCCOMPO.2013.6735186
M. Cazzaniga, Patrice Joubert Doriol, Aurora Sanna, Emmanuel Blanc, V. Liberali, D. Pandini
Board-level I/Os signal integrity and conducted EMI have become a critical concern for high-speed circuit and package designers, and a major element of performance and reliability degradation in modern electronic systems, in particular for automotive microcontrollers, which must satisfy stringent low-EMI and noise immunity requirements. One of the most detrimental root causes of I/O signals conducted EMI is the simultaneous switching noise generated by the toggling I/Os (SSO) on the power distribution network of the I/O ring. However, this is not the only noise source that must be considered. In fact, an often overlooked contributor to SSO is the noise generated by the switching digital core that propagates to the I/Os and the noise-sensitive on-chip analog circuitry throughout the common silicon substrate. In this work, we analyze the impact of substrate noise on the I/O signals conducted EMI of an industrial automotive microcontroller, and we compare it against other noise sources. Moreover, we demonstrate the effectiveness of the technological protections against substrate noise in a leading-edge technology.
{"title":"Evaluating the impact of substrate noise on conducted EMI in automotive microcontrollers","authors":"M. Cazzaniga, Patrice Joubert Doriol, Aurora Sanna, Emmanuel Blanc, V. Liberali, D. Pandini","doi":"10.1109/EMCCOMPO.2013.6735186","DOIUrl":"https://doi.org/10.1109/EMCCOMPO.2013.6735186","url":null,"abstract":"Board-level I/Os signal integrity and conducted EMI have become a critical concern for high-speed circuit and package designers, and a major element of performance and reliability degradation in modern electronic systems, in particular for automotive microcontrollers, which must satisfy stringent low-EMI and noise immunity requirements. One of the most detrimental root causes of I/O signals conducted EMI is the simultaneous switching noise generated by the toggling I/Os (SSO) on the power distribution network of the I/O ring. However, this is not the only noise source that must be considered. In fact, an often overlooked contributor to SSO is the noise generated by the switching digital core that propagates to the I/Os and the noise-sensitive on-chip analog circuitry throughout the common silicon substrate. In this work, we analyze the impact of substrate noise on the I/O signals conducted EMI of an industrial automotive microcontroller, and we compare it against other noise sources. Moreover, we demonstrate the effectiveness of the technological protections against substrate noise in a leading-edge technology.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123371596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/EMCCOMPO.2013.6735179
C. Oliveira, J. Benfica, L. Bolzani, F. Vargas, J. Lipovetzky, A. Lutenberg, E. Gatti, F. Hernandez, A. Boyer
Due to stringent constraints such as battery-powered, high-speed, low-voltage power supply and noise-exposed operation, safety-critical real-time embedded systems are often subject to transient faults originated from a large spectrum of noisy sources; among them, conducted and radiated Electromagnetic Interference (EMI). As the major consequence, the system's reliability degrades. In this paper, we present the most recent results involving the reliability analysis of a hardware-based intellectual property (IP) core, namely Real-Time Operating System - Guardian (RTOS-G). This is an on-chip watchdog that monitors the RTOS' activity in order to detect faults that corrupt tasks' execution flow in embedded systems running preemptive RTOS. Experimental results based on the Plasma processor IP core running different test programs that exploit several RTOS resources have been developed. During test execution, the proposed system was aged by means of total ionizing dose (TID) radiation and then, exposed to radiated EMI according to the international standard IEC 62.132-2 (TEM Cell Test Method). The obtained results demonstrate the proposed approach provides higher fault coverage and reduced fault latency when compared to the native (software) fault detection mechanisms embedded in the kernel of the RTOS.
{"title":"Reliability analysis of an on-chip watchdog for embedded systems exposed to radiation and EMI","authors":"C. Oliveira, J. Benfica, L. Bolzani, F. Vargas, J. Lipovetzky, A. Lutenberg, E. Gatti, F. Hernandez, A. Boyer","doi":"10.1109/EMCCOMPO.2013.6735179","DOIUrl":"https://doi.org/10.1109/EMCCOMPO.2013.6735179","url":null,"abstract":"Due to stringent constraints such as battery-powered, high-speed, low-voltage power supply and noise-exposed operation, safety-critical real-time embedded systems are often subject to transient faults originated from a large spectrum of noisy sources; among them, conducted and radiated Electromagnetic Interference (EMI). As the major consequence, the system's reliability degrades. In this paper, we present the most recent results involving the reliability analysis of a hardware-based intellectual property (IP) core, namely Real-Time Operating System - Guardian (RTOS-G). This is an on-chip watchdog that monitors the RTOS' activity in order to detect faults that corrupt tasks' execution flow in embedded systems running preemptive RTOS. Experimental results based on the Plasma processor IP core running different test programs that exploit several RTOS resources have been developed. During test execution, the proposed system was aged by means of total ionizing dose (TID) radiation and then, exposed to radiated EMI according to the international standard IEC 62.132-2 (TEM Cell Test Method). The obtained results demonstrate the proposed approach provides higher fault coverage and reduced fault latency when compared to the native (software) fault detection mechanisms embedded in the kernel of the RTOS.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134355650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/EMCCOMPO.2013.6735169
M. Nagata, S. Shimazaki, N. Azuma, Shin-ichiro Takahashi, M. Murakami, K. Hori, S. Tanaka, M. Yamaguchi
In-band interferers in wireless communication channels are due to the high order harmonics of multiple clock frequencies used by baseband digital signal processing in a single-chip solution. The impacts of in-band spurious tones on wireless performance are explored with hardware-in-the-loop simulation (HILS) of the LTE compliant systems. RF receiver circuits fabricated in a 65 nm CMOS technology are involved in the HILS, for combining circuit-level interactions at the front end and system-level digital signal processing in the back end. Experiments exhibit the sensitivity of LTE communication throughput against substrate coupling noise from a digital noise emulator to the RF receiver circuits on the same chip. The observed response is equivalently confirmed with the input referred RF sinusoidal noise components intentionally added to the input RF signal with LTE modulation. The HILS enables hierarchical diagnosis of a wireless communication system from circuit-level interactions to system-level responses against noise coupling.
{"title":"Measurement-based diagnosis of wireless communication performance in the presence of in-band interferers in RF ICs","authors":"M. Nagata, S. Shimazaki, N. Azuma, Shin-ichiro Takahashi, M. Murakami, K. Hori, S. Tanaka, M. Yamaguchi","doi":"10.1109/EMCCOMPO.2013.6735169","DOIUrl":"https://doi.org/10.1109/EMCCOMPO.2013.6735169","url":null,"abstract":"In-band interferers in wireless communication channels are due to the high order harmonics of multiple clock frequencies used by baseband digital signal processing in a single-chip solution. The impacts of in-band spurious tones on wireless performance are explored with hardware-in-the-loop simulation (HILS) of the LTE compliant systems. RF receiver circuits fabricated in a 65 nm CMOS technology are involved in the HILS, for combining circuit-level interactions at the front end and system-level digital signal processing in the back end. Experiments exhibit the sensitivity of LTE communication throughput against substrate coupling noise from a digital noise emulator to the RF receiver circuits on the same chip. The observed response is equivalently confirmed with the input referred RF sinusoidal noise components intentionally added to the input RF signal with LTE modulation. The HILS enables hierarchical diagnosis of a wireless communication system from circuit-level interactions to system-level responses against noise coupling.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131478500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/EMCCOMPO.2013.6735204
S. Jarrix, J. Raoult, A. Doridant, C. Pouant, P. Hoffmann
Discrete low-frequency bipolar transistors are subjected to two types of interferences: CW (continuous wave) and pulsed modulated sine signal. In the goal to study the electromagnetic immunity of integrated circuits, devices are biased at low current level. Specific interference frequency bands induce changes in the transistor output voltage, even with frequency values out of band of operation of the devices. Analysis of results obtained under CW signal injection highlights the presence of physical phenomena of rectification and ac current crowding. Pulse-modulated sines show that the amplitude of the interference mean power influences the value of the output voltage offset. Parameters of the pulse interference can be changed to modify the transient response of the transistor.
{"title":"Discrete low-frequency transistors subjected to high-frequency CW and pulse-modulated sine signals","authors":"S. Jarrix, J. Raoult, A. Doridant, C. Pouant, P. Hoffmann","doi":"10.1109/EMCCOMPO.2013.6735204","DOIUrl":"https://doi.org/10.1109/EMCCOMPO.2013.6735204","url":null,"abstract":"Discrete low-frequency bipolar transistors are subjected to two types of interferences: CW (continuous wave) and pulsed modulated sine signal. In the goal to study the electromagnetic immunity of integrated circuits, devices are biased at low current level. Specific interference frequency bands induce changes in the transistor output voltage, even with frequency values out of band of operation of the devices. Analysis of results obtained under CW signal injection highlights the presence of physical phenomena of rectification and ac current crowding. Pulse-modulated sines show that the amplitude of the interference mean power influences the value of the output voltage offset. Parameters of the pulse interference can be changed to modify the transient response of the transistor.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124548952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The extremely low frequency (ELF) magnetic field has significant impact on yield rate especially when the processing reaches less than 14 nanometer in next-generation nano-Fab. For sensitive equipments such as the SEMs, TEMs, STEMs, FIB writers, and E-beam writers, it suggests that the ELF magnetic field should be lower than 0.5 milli-Gauss to guarantee good yield. Therefore, mitigating the magnetic field by active/passive approaches such as the material shielding, wire permutation, and active canceling are highly demanded.
在新一代纳米晶圆厂中，极低频磁场对成品率有显著影响，特别是当加工深度小于14纳米时。对于sem, tem, stem, FIB写入器和电子束写入器等敏感设备，建议极低频磁场应低于0.5毫高斯以保证良好的良率。因此，迫切需要通过材料屏蔽、导线排列和有源抵消等有源/无源方法来减轻磁场。
{"title":"Active magnetic field canceling system","authors":"Weiyang Sun, Feng-Chang Chuang, Yu-Lin Song, Chwen Yu, T. Ma, Tzong-Lin Wu, Luh-Maan Chang","doi":"10.1109/EMCCOMPO.2013.6735184","DOIUrl":"https://doi.org/10.1109/EMCCOMPO.2013.6735184","url":null,"abstract":"The extremely low frequency (ELF) magnetic field has significant impact on yield rate especially when the processing reaches less than 14 nanometer in next-generation nano-Fab. For sensitive equipments such as the SEMs, TEMs, STEMs, FIB writers, and E-beam writers, it suggests that the ELF magnetic field should be lower than 0.5 milli-Gauss to guarantee good yield. Therefore, mitigating the magnetic field by active/passive approaches such as the material shielding, wire permutation, and active canceling are highly demanded.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114526137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/EMCCOMPO.2013.6735173
T. Matsushima, Nobuaki Ikehara, T. Hisakado, O. Wada
In this paper, we discussed the reproducibility of the direct RF power injection method. Transmission and reflection characteristics of the measurement setup affected the evaluation of immunity. Also, the common-mode generation at the connection of the DC supply cable should be reduced using the common-mode absorption devices.
{"title":"Improvement of reproducibility of DPI method to quantify RF conducted immunity of LDO regulator","authors":"T. Matsushima, Nobuaki Ikehara, T. Hisakado, O. Wada","doi":"10.1109/EMCCOMPO.2013.6735173","DOIUrl":"https://doi.org/10.1109/EMCCOMPO.2013.6735173","url":null,"abstract":"In this paper, we discussed the reproducibility of the direct RF power injection method. Transmission and reflection characteristics of the measurement setup affected the evaluation of immunity. Also, the common-mode generation at the connection of the DC supply cable should be reduced using the common-mode absorption devices.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"428 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131076035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/EMCCOMPO.2013.6735199
A. Boyer, S. Bendhia
Recent studies have shown that integrated circuit aging modifies electromagnetic emission significantly. The proposed paper aims at evaluating the impact of aging on the power integrity and the conducted emission of digital integrated circuits, clarifying the origin of electromagnetic emission evolution and proposing a methodology to predict this evolution. On-chip measurements of power supply voltage bounces in a CMOS 90 nm technology test chip and conducted emission measurements are combined with electric stress to characterize the influence of aging. Simulations based on ICEM modeling modified by an empirical coefficient to model the evolution of the emission induced by device aging is proposed and tested.
{"title":"Characterization and modeling of electrical stresses on digital integrated circuits power integrity and conducted emission","authors":"A. Boyer, S. Bendhia","doi":"10.1109/EMCCOMPO.2013.6735199","DOIUrl":"https://doi.org/10.1109/EMCCOMPO.2013.6735199","url":null,"abstract":"Recent studies have shown that integrated circuit aging modifies electromagnetic emission significantly. The proposed paper aims at evaluating the impact of aging on the power integrity and the conducted emission of digital integrated circuits, clarifying the origin of electromagnetic emission evolution and proposing a methodology to predict this evolution. On-chip measurements of power supply voltage bounces in a CMOS 90 nm technology test chip and conducted emission measurements are combined with electric stress to characterize the influence of aging. Simulations based on ICEM modeling modified by an empirical coefficient to model the evolution of the emission induced by device aging is proposed and tested.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130574727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-01DOI: 10.1109/EMCCOMPO.2013.6735170
N. Azuma, S. Shimazaki, N. Miura, M. Nagata, T. Kitamura, Shin-ichiro Takahashi, M. Murakami, K. Hori, A. Nakamura, K. Tsukamoto, M. Iwanami, E. Hankui, S. Muroga, Y. Endo, S. Tanaka, M. Yamaguchi
Substrate noise coupling in RF receiver front end circuitry for LTE wireless communication was examined by full-chip level simulation and on-chip measurements, with a demonstrator built in a 65 nm CMOS technology. A complete simulation flow of full-chip level substrate noise coupling uses a decoupled modeling approach, where substrate noise waveforms drawn with a unified package-chip model of noise source circuits are given to mixed-level simulation of RF chains as noise sensitive circuits. The distribution of substrate noise in a chip and the attenuation with distance are simulated and compare with the measurements. The interference of substrate noise at the 17th harmonics of 124.8 MHz - the operating frequency of the CMOS noise emulator creates spurious tones in the communication bandwidth at 2.1 GHz.
{"title":"Measurements and simulation of substrate noise coupling in RF ICs with CMOS digital noise emulator","authors":"N. Azuma, S. Shimazaki, N. Miura, M. Nagata, T. Kitamura, Shin-ichiro Takahashi, M. Murakami, K. Hori, A. Nakamura, K. Tsukamoto, M. Iwanami, E. Hankui, S. Muroga, Y. Endo, S. Tanaka, M. Yamaguchi","doi":"10.1109/EMCCOMPO.2013.6735170","DOIUrl":"https://doi.org/10.1109/EMCCOMPO.2013.6735170","url":null,"abstract":"Substrate noise coupling in RF receiver front end circuitry for LTE wireless communication was examined by full-chip level simulation and on-chip measurements, with a demonstrator built in a 65 nm CMOS technology. A complete simulation flow of full-chip level substrate noise coupling uses a decoupled modeling approach, where substrate noise waveforms drawn with a unified package-chip model of noise source circuits are given to mixed-level simulation of RF chains as noise sensitive circuits. The distribution of substrate noise in a chip and the attenuation with distance are simulated and compare with the measurements. The interference of substrate noise at the 17th harmonics of 124.8 MHz - the operating frequency of the CMOS noise emulator creates spurious tones in the communication bandwidth at 2.1 GHz.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121266074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：