Memristor based delay element using current starved inverter

Siti Musliha Ajmal Binti Mokhtar, W. Abdullah
{"title":"Memristor based delay element using current starved inverter","authors":"Siti Musliha Ajmal Binti Mokhtar, W. Abdullah","doi":"10.1109/RSM.2013.6706478","DOIUrl":null,"url":null,"abstract":"This paper will first review on some applications of newly found passive element, the memristor. Utilizing the beneficial characteristic of memristor where it can remember its last state, more and more improvements on today electronic designs has been proposed. However, it is crucial to observe the behavior of memristor model before applying into circuits, especially when the memristor is coupled with other devices. In this paper, LTspice memristor model is used to simulate memristor behavior and applied to the basic delay element circuit. The circuit used a tristate inverter as the delay element. It controls the current flowing to the parasitic capacitor, thus controlling the delay. The compatibility of memristor with the delay element is also in consideration to ensure the functionality of the circuits. At the end, a basic delay element using inverter and memristor is presented. This paper is divided into 4 sections, including the introduction where few examples of memristor applications are explained. It follows by next section where the inverter delay characteristic is narrated. Section 3 is about a mathematical model of memristor that been used to provide a specific memristor resistance in order to get certain delay value during simulation. Using LT spice, a memristor based delay circuit design is then proposed and the delay is observed by circuit simulation. In conclusion, the calculated R and delay value is then compared to the simulation result in order to verify circuit functionality.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"325 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2013.6706478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper will first review on some applications of newly found passive element, the memristor. Utilizing the beneficial characteristic of memristor where it can remember its last state, more and more improvements on today electronic designs has been proposed. However, it is crucial to observe the behavior of memristor model before applying into circuits, especially when the memristor is coupled with other devices. In this paper, LTspice memristor model is used to simulate memristor behavior and applied to the basic delay element circuit. The circuit used a tristate inverter as the delay element. It controls the current flowing to the parasitic capacitor, thus controlling the delay. The compatibility of memristor with the delay element is also in consideration to ensure the functionality of the circuits. At the end, a basic delay element using inverter and memristor is presented. This paper is divided into 4 sections, including the introduction where few examples of memristor applications are explained. It follows by next section where the inverter delay characteristic is narrated. Section 3 is about a mathematical model of memristor that been used to provide a specific memristor resistance in order to get certain delay value during simulation. Using LT spice, a memristor based delay circuit design is then proposed and the delay is observed by circuit simulation. In conclusion, the calculated R and delay value is then compared to the simulation result in order to verify circuit functionality.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于忆阻器的电流饥渴型逆变器延时元件
本文首先综述了新发现的无源元件忆阻器的一些应用。利用忆阻器能记住其最后状态的有利特性,对当今的电子设计提出了越来越多的改进。然而,在应用到电路中,特别是当忆阻器与其他器件耦合时,观察忆阻器模型的行为是至关重要的。本文采用LTspice忆阻器模型来模拟忆阻器的行为,并将其应用于基本延迟元件电路。该电路采用三态逆变器作为延时元件。它控制流向寄生电容的电流,从而控制延迟。为了保证电路的功能,还考虑了忆阻器与延迟元件的兼容性。最后,提出了一种基于逆变器和忆阻器的基本延迟元件。本文分为4个部分,包括引言部分,其中解释了几个忆阻器应用的例子。接下来是下一节,其中逆变器的延迟特性是叙述。第3节是关于忆阻器的数学模型,在仿真过程中提供特定的忆阻电阻以获得一定的延迟值。在此基础上,提出了一种基于忆阻器的延迟电路设计,并通过电路仿真观察了延迟。最后,将计算的R值和延迟值与仿真结果进行比较,以验证电路的功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Capacitance-voltage hysteresis of MIS device with PMMA:TiO2 nanocomposite as gate dielectric Body doping analysis of vertical strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP) Effect of microchannel geometry in fluid flow for PDMS based device FIB with EDX analysis use for thin film contamination layer inspection Fabrication of multi-walled carbon nanotubes hydrogen sensor on plastic
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1