{"title":"GaN power device and reliability for automotive applications","authors":"T. Kachi, D. Kikuta, T. Uesugi","doi":"10.1109/IRPS.2012.6241815","DOIUrl":null,"url":null,"abstract":"Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV) systems. For future development of the HV/EV, higher performances than Si power device, for example, low on-resistance, high speed, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Present status of the GaN power device development is presented. Reliability of the GaN power device was also discussed.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 37
Abstract
Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV) systems. For future development of the HV/EV, higher performances than Si power device, for example, low on-resistance, high speed, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Present status of the GaN power device development is presented. Reliability of the GaN power device was also discussed.
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