F. Su, G. Sharma, F. Blanchard, L. Razzari, A. Ayesheshim, R. Morandotti, T. Ozaki, F. Hegmann
{"title":"Nonlinear free-carrier velocity induced by intense terahertz pulse in photoexcited semiconductor materials","authors":"F. Su, G. Sharma, F. Blanchard, L. Razzari, A. Ayesheshim, R. Morandotti, T. Ozaki, F. Hegmann","doi":"10.1117/12.900526","DOIUrl":null,"url":null,"abstract":"The transient absorption bleaching and velocity overshoot of photoexcited carriers in GaAs and Si have been observed by the intense few-circle terahertz (THz) probe pulse in the optical pump-terahertz probe (OPTP) configuration. The free-carrier THz nonlinearity is attributed to the transient electron redistribution in conduction band induced by the strong THz electric field component.","PeriodicalId":355017,"journal":{"name":"Photoelectronic Detection and Imaging","volume":"27 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photoelectronic Detection and Imaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.900526","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The transient absorption bleaching and velocity overshoot of photoexcited carriers in GaAs and Si have been observed by the intense few-circle terahertz (THz) probe pulse in the optical pump-terahertz probe (OPTP) configuration. The free-carrier THz nonlinearity is attributed to the transient electron redistribution in conduction band induced by the strong THz electric field component.
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