{"title":"An Integrated 2.4GHz CMOS Class F Power Amplifier","authors":"H. Zhe, A. bin A'ain, A. Kordesch","doi":"10.1109/SMELEC.2006.380688","DOIUrl":null,"url":null,"abstract":"This work will explore the integration of a class-F power amplifier using CMOS technology. At 2.4 GHz, the fully integrated on-chip CMOS power amplifier can deliver 21.8 dBm output power with 43.95% efficiency. The design makes use of the C18 RF models provided by Silterra and design of spiral inductor using commercial synthesis software.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This work will explore the integration of a class-F power amplifier using CMOS technology. At 2.4 GHz, the fully integrated on-chip CMOS power amplifier can deliver 21.8 dBm output power with 43.95% efficiency. The design makes use of the C18 RF models provided by Silterra and design of spiral inductor using commercial synthesis software.
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