A nonlinear model for highly excited vibrational energy levels of silane

Abstract

The highly excited vibrational energy levels of SiH stretches of silane SiH4 in the electronic ground state are calculated using a three-parameter nonlinear model, i.e., the quantized discrete self-trapping equation. The obtained results are in good agreements with the experimental data and with those obtained from local mode calculations of others. We note that SiH4 molecule is a typical molecule close to the local mode limit, and that when n ≥ 3, the molecule could be thought of as vibrating with the four SiH stretching quanta trapped into a single SiH bond.