Contribution from moldcular field to the temperature dependence of tunneling magnetoresistance

Wang Jun-zhong, Li Bo-zang, Gao Jun-shan
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Abstract

Based on the nearly free-electron approximation, we have investigaed the temperature (T) dependence of spin-polarized tunneling in the magnetic tunnel junction with an asymmetrical barrier, with emphasis on the variation of molecular field with T in the same way as that of surface magnetization. It is found that the Slonczewski model can describe well the T dependence of spin-polarized tunneling, while the Julliere model only describes the T dependence of JMR qualitatively, but does accurately that of the difference of tunneling conductance between the parallel and antiparallel alignments for the magnetizations of FMs; Differing from the previous finding, we find the electron spin polarization is not strictly proportional to the surface magnetization, for the former decreases with the increasing T more rapidly than the latter does.
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分子场对隧道磁电阻温度依赖性的贡献
基于近自由电子近似,我们研究了具有非对称势垒的磁隧道结中自旋极化隧穿的温度(T)依赖关系,重点研究了分子场随T的变化,就像表面磁化强度随T的变化一样。发现slonchzewski模型能很好地描述自旋极化隧穿的T依赖性,而Julliere模型只能定性地描述JMR的T依赖性,但能准确地描述FMs磁化的平行和反平行排列之间的隧穿电导差异;与之前的发现不同,我们发现电子自旋极化并不严格与表面磁化成正比,因为前者随T的增加而下降的速度比后者更快。
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