B. Debnath, M. S. Islam, S. L. Noor, M. Hassan, A. Haq, M. Z. R. Khan
{"title":"Simulation study of SOI four gate transistor","authors":"B. Debnath, M. S. Islam, S. L. Noor, M. Hassan, A. Haq, M. Z. R. Khan","doi":"10.1109/ICDCSYST.2012.6188709","DOIUrl":null,"url":null,"abstract":"The structure of silicon-on-insulator (SOI) four-gate transistor (G4-FET) and its different parameters for different biasing conditions are studied. A G4-FET simulation model was developed by Silvaco/Atlas 3-D simulator which incorporates non-ideal effects like concentration dependent mobility, Shockley-Read-Hall recombination, Auger recombination, bandgap narrowing effect. This model can be useful in measuring parameters dependency of a SOI four gate transistor.","PeriodicalId":356188,"journal":{"name":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2012.6188709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The structure of silicon-on-insulator (SOI) four-gate transistor (G4-FET) and its different parameters for different biasing conditions are studied. A G4-FET simulation model was developed by Silvaco/Atlas 3-D simulator which incorporates non-ideal effects like concentration dependent mobility, Shockley-Read-Hall recombination, Auger recombination, bandgap narrowing effect. This model can be useful in measuring parameters dependency of a SOI four gate transistor.
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