{"title":"A monolithic, 1000 watt SPDT switch","authors":"T. Boles, J. Brogle, A. Rozbicki","doi":"10.1109/MWSYM.2008.4633297","DOIUrl":null,"url":null,"abstract":"A monolithic high power, high linearity, broadband, PIN diode switch capable of handling greater than 1000 watts of pulsed peak RF power has been designed and developed using a patented glass/silicon technology. This technology designated HMIC, Heterolithic Microwave Integrated Circuit, has been developed for various mixed signal and control circuit function applications ranging from HF through microwave frequencies. The unique design and fabrication techniques required for the needed improvements in thermal resistance and peak-to-peak voltage handling of this high power switch are discussed in detail. In addition, the results of this development effort in terms of standard switch parameters; insertion loss, isolation, return loss, and power handling are presented in the following paper.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"156 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2008.4633297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A monolithic high power, high linearity, broadband, PIN diode switch capable of handling greater than 1000 watts of pulsed peak RF power has been designed and developed using a patented glass/silicon technology. This technology designated HMIC, Heterolithic Microwave Integrated Circuit, has been developed for various mixed signal and control circuit function applications ranging from HF through microwave frequencies. The unique design and fabrication techniques required for the needed improvements in thermal resistance and peak-to-peak voltage handling of this high power switch are discussed in detail. In addition, the results of this development effort in terms of standard switch parameters; insertion loss, isolation, return loss, and power handling are presented in the following paper.
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