{"title":"Lanthanides application in planar technology of microwave devices production","authors":"D. Brinkevich, V. Prosolovich, Yu.N. Yankovski","doi":"10.1109/CRMICO.2002.1137301","DOIUrl":null,"url":null,"abstract":"It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.","PeriodicalId":378024,"journal":{"name":"12th International Conference Microwave and Telecommunication Technology","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference Microwave and Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2002.1137301","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.
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