Validation of the Industry-Standard ASM-GaN Model for Gate-Length Scaling

Abstract

This paper validates the industry standard ASMGaN compact model in terms of capturing the effect of gatelength scaling. Pulsed IV measurements were performed to measure the variation in the IV characteristics of the GaN HEMT structure under test with gate length, in isolation from the effect of trapping. The model has been validated by comparing the simulation results of the model with the pulsed IV measurement results of three AlGaN/GaN Schottky HEMTs which differed only in terms of their gate lengths.