New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs

Abstract

The random telegraph noise (RTN) is becoming a critical issue for variability and reliability in nanoscale MOSFETs. Since devices actually operate under AC signals in digital circuits, it is essential to investigate the AC RTN at dynamic voltage, instead of traditional DC RTN at fixed gate bias. In this paper, the AC RTN in nano-MOSFETs is experimentally studied in detail, with the focus on the time domain. Various RTN parameters are investigated, in terms of frequency dependence and bias dependence, which are important for robust circuit design against RTN.