Dielectric Reduction of Nanometric Amorphous Silicon

Abstract

Theoretical values of in amorphous silicon quantum dots (1.8 – 12 nm)dielectric reduction have been calculated. These calculations presented that the dielectric constant of amorphous silicon quantum dots is suppressed. Also, it has been investigated the frequency dependence of the dielectric constant. The variation of the dielectric constant with frequency is similar to the variation of polarizability and polarization. The dielectric constant is made up of contributions from electronic, atomic, and space charge polarization. With the presented calculations, the effect of quantum confinement was adopted, since the bandgap of nano semiconductors can be governed by the size of amorphous silicon quantum dots.