D. Mensa, Q. Lee, J. Guthrie, S. Jaganathan, M. Rodwell
{"title":"Baseband amplifiers in transferred-substrate HBT technology","authors":"D. Mensa, Q. Lee, J. Guthrie, S. Jaganathan, M. Rodwell","doi":"10.1109/GAAS.1998.722614","DOIUrl":null,"url":null,"abstract":"Baseband amplifiers have been fabricated in the transferred-substrate HBT process. A Darlington amplifier achieved a DC gain of 15.6 dB with >50 GHz bandwidth. A mirror doubler amplifier achieved a DC gain of 6.8 dB with 86 GHz bandwidth. These amplifiers will be useful for future work in ADCs, DACs, and fiber-optic receivers, and serve to benchmark the transferred-substrate technology.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722614","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
Baseband amplifiers have been fabricated in the transferred-substrate HBT process. A Darlington amplifier achieved a DC gain of 15.6 dB with >50 GHz bandwidth. A mirror doubler amplifier achieved a DC gain of 6.8 dB with 86 GHz bandwidth. These amplifiers will be useful for future work in ADCs, DACs, and fiber-optic receivers, and serve to benchmark the transferred-substrate technology.