Lanxiang Wang, G. Han, S. Su, Qian Zhou, Yue Yang, P. Guo, Wei Wang, Y. Tong, P. S. Lim, C. Xue, Qiming Wang, B. Cheng, Y. Yeo
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引用次数: 4
Abstract
We report a novel metal stanogermanide contact metallization process for high-mobility germanium-tin (Ge0.947Sn0.053 or GeSn) channel p-MOSFETs. Nickel-Platinum (NiPt) alloy was used to react with GeSn to form a multi-phase Ni and Pt stanogermanide [NiGeSn+Ptx(GeSn)y] contact on epitaxial Ge0.947Sn0.053. Rapid thermal annealing of co-sputtered Ni and Pt on GeSn/Ge (100) at temperatures from 350 °C to 550 °C in N2 was used for the stanogermanide formation. Compared with nickel stanogermanide (NiGeSn) contact, the Pt-incorporated contact, i.e. NiGeSn+Ptx(GeSn)y, exhibits enhanced thermal stability in a wide range of formation temperatures.
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