A Fully Integrated 5.8 GHz BiCMOS SiGe:C tunable active phase shifter for Beamforming

M. Kanoun, B. Jadav, D. Cordeau, J. Paillot, H. Mnif, M. Loulou
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引用次数: 1

Abstract

This paper presents the design and the implementation of a fully integrated active phase shifter for beamforming at 5.8 GHz in a 0.25 µm BiCMOS SiGe:C process. The proposed circuit is able to provide a 360° continuous phase shift range, allowing to control the radiation pattern of a phased antenna array. The required phase shift is synthesized using an Injection-Locked Oscillator (ILO) for fine tuning followed by an in-phase/quadrature (IQ) modulator for coarse tuning. The total current consumption of the circuit is 33.7 mA from a 2.5 V supply voltage. The core size including all the pads is 1.324*1.086mm2.
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用于波束形成的全集成5.8 GHz BiCMOS SiGe:C可调谐有源移相器
本文介绍了一种全集成有源移相器的设计和实现,该移相器采用0.25µm BiCMOS SiGe:C工艺,用于5.8 GHz波束形成。所提出的电路能够提供360°连续相移范围,允许控制相控天线阵列的辐射方向图。所需的相移使用注入锁定振荡器(ILO)进行微调,然后使用同相/正交(IQ)调制器进行粗调谐。在2.5 V电源电压下,电路的总电流消耗为33.7 mA。包括所有焊盘在内的芯尺寸为1.324*1.086mm2。
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