Effect of Leakage Currents in Adiabatic Logic Circuits at Lower Technology Nodes

Tridib Sarma, C. Parikh
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Abstract

This paper discusses the behavior of three popular adiabatic logic architectures, namely, Transmission-Gate based Adiabatic Logic, Efficient Charge Recovery Logic and static CMOS logic, in deep-submicrometer nodes. Comparison among their energy consumptions is done for varying rise times of the power supply, and for varying channel lengths, and the role of leakage current is studied. It is found that due to subthreshold leakage, adiabatic logic circuits may consume more power than conventional CMOS circuits, as channel lengths decrease.Thus it is recommended that for 90 nm technology node, channel lengths of greater than 200 nm must be used for adiabatic logic circuit implementations. It is also found that transmission-gate based logic circuits consume much less power compared to the other adiabatic logic styles.
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低技术节点绝热逻辑电路泄漏电流的影响
本文讨论了三种流行的绝热逻辑架构,即基于传输门的绝热逻辑,高效电荷恢复逻辑和静态CMOS逻辑,在深亚微米节点中的行为。比较了不同电源上升次数和不同通道长度下的能耗,并研究了泄漏电流的作用。研究发现,当通道长度减小时,由于亚阈值泄漏,绝热逻辑电路可能比传统CMOS电路消耗更多的功率。因此,建议对于90nm技术节点,必须使用大于200nm的通道长度来实现绝热逻辑电路。与其他绝热逻辑电路相比,基于传输门的逻辑电路功耗更低。
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