J. Onuki, Y. Chonan, T. Komiyama, M. Nihei, R. Saitou, M. Suwa, M. Kitano
{"title":"A new void free soldering process in large-area, high power IGBT modules","authors":"J. Onuki, Y. Chonan, T. Komiyama, M. Nihei, R. Saitou, M. Suwa, M. Kitano","doi":"10.1109/ISPSD.2000.856845","DOIUrl":null,"url":null,"abstract":"A new void free process for the solder joint between a chip mounted AlN substrate and a metal substrate in large-area, high power IGBT modules has been investigated. The following new process consists of two steps. First, Ar/sup +/ ions were used to clean the surface of Ni plated films on the metal and AlN substrates by followed by coating with a thin Ag film, and secondly, 50 wt.% Pb-Sn solder sandwiched between the two substrates was heated in vacuum at 503 K for 5 min. and then cooled in a N/sub 2/ atmosphere. Using this process, the area percentage of voids in a soldering area up to 130/spl times/190 mm/sup 2/ can be reduced to less than 0.2%. The fatigue life time of solder joints made with this new method are found to be about 3 times longer than those by the soldering methods in H/sub 2/ (abbreviated as H/sub 2/ process hereafter).","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A new void free process for the solder joint between a chip mounted AlN substrate and a metal substrate in large-area, high power IGBT modules has been investigated. The following new process consists of two steps. First, Ar/sup +/ ions were used to clean the surface of Ni plated films on the metal and AlN substrates by followed by coating with a thin Ag film, and secondly, 50 wt.% Pb-Sn solder sandwiched between the two substrates was heated in vacuum at 503 K for 5 min. and then cooled in a N/sub 2/ atmosphere. Using this process, the area percentage of voids in a soldering area up to 130/spl times/190 mm/sup 2/ can be reduced to less than 0.2%. The fatigue life time of solder joints made with this new method are found to be about 3 times longer than those by the soldering methods in H/sub 2/ (abbreviated as H/sub 2/ process hereafter).
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