New Method for Enhancing Photon Emission Measurements Similar to 2D-Tomography

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI:10.1109/IPFA.2018.8452490

I. Vogt, A. Glowacki, U. Kerst, P. Perdu, T. Nakamura, C. Boit

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引用次数: 2

Abstract

We present a new experimental method for enhancing quality and accuracy of photon emission measurements (PEM). The technique consists of taking emission images of the device rotated through several different angles. The independent information from several images is then used to numerically calculate an emission pattern, which is superior to just one single PE image. Therefore, the method also allows for spectral photon emission analysis (SPEM) in cases, where emission overlap of neighboring devices prevented SPEM analysis up to this date. This publication gives an overview of the theoretical, experimental and numerical basics of the new method. To give a proof-of-concept we apply the method to a sample case of spectral photon emission and electron temperature analysis of a ring oscillator built in 120nm technology. The obtained results are then compared to data acquired by a conventional measurement on a location of the ring oscillator (RO), where conventional analysis was possible.

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增强光子发射测量的新方法类似于二维断层扫描

提出了一种提高光子发射测量(PEM)质量和精度的新实验方法。该技术包括通过几个不同角度旋转装置拍摄发射图像。然后使用来自多个图像的独立信息来数值计算发射模式，这优于仅使用单个PE图像。因此，该方法还允许光谱光子发射分析(SPEM)，在这种情况下，相邻器件的发射重叠阻止了SPEM分析。本出版物概述了新方法的理论、实验和数值基础。为了给出概念验证，我们将该方法应用于120nm技术的环形振荡器的光谱光子发射和电子温度分析的示例案例。然后将获得的结果与在环形振荡器(RO)位置上进行常规测量获得的数据进行比较，在该位置上可以进行常规分析。

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2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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