R. Suzuki, T. Sengoku, K. Nemoto, S. Tanabe, T. Miyamoto
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引用次数: 0
Abstract
MOCVD grown self-assembled quantum dot using dilute nitrogen material system (GaInNAs) is presented for GaAs-based long wavelength VCSELs. Suppression of Coalescence and inhomogeneous broadening by incorporating nitrogen into dot structure is particularly discussed.
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