VHDL-AMS modelling of multi-chip SiC power modules

Abstract

This paper presents a methodology for modelling of multichip Silicon Carbide (SiC) power modules where multi-domain effects (electrical, thermal, and electromagnetic) in the power module can be accurately observed with minimal computational cost. Commercially available numerical analysis software are capable of showing these effects but there is currently no commercially available software package where effects from one domain (e.g. thermal) can be fed back to affect other domains (e.g. electrical) in real time simulation. In this work, an advanced semiconductor model was created with physics based equations to describe the electrical, thermal and electromagnetic aspects of the model. An algorithm to increase the computational efficiency of the thermal aspect of the model was also presented. The model was then tested in steady state, dynamic and multichip configurations and the results were validated with experiments and simulations from previous work in this field.