{"title":"Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors","authors":"Jiling Song, J. Yuan","doi":"10.1109/SECON.1998.673317","DOIUrl":null,"url":null,"abstract":"The excess electron barrier height at high current densities is examined. The barrier effects on the collector current, transconductance as well as base-collector junction capacitance are calculated. The analytical results are compared with the experimental data and device simulation results. Temperature-dependent characteristics are also evaluated.","PeriodicalId":281991,"journal":{"name":"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1998.673317","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The excess electron barrier height at high current densities is examined. The barrier effects on the collector current, transconductance as well as base-collector junction capacitance are calculated. The analytical results are compared with the experimental data and device simulation results. Temperature-dependent characteristics are also evaluated.
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