Investigation of the Phase Composition and Morphology of Silicon Structures by Using the Raman Spectroscopy to Determine the Parameter of Crystallinity

Abstract

This work aims to investigate the dependence of the phase composition of thin films of microcrystalline silicon deposition on process parameters. The thin films of microcrystalline silicon were obtained by plasma-chemical deposition method (PECVD). Phase composition and correlation between degree of crystallinity and structure of the obtained layers were analyzed by Raman Spectroscopy. The results show that the control of several technical parameters, e.g. pressure, discharge power and monosilane flow, allows to reach the crystallinity parameter in the range 50–70%. Based on the conducted experiments, the recommendations for the control of the crystallinity parameter, which are planned to be implemented when working with silicon-based porous structures, were proposed.