Long-Wavelength Lead Sulfide Quantum Dots Sensing up to 2600 nm for Short-Wavelength Infrared Photodetectors

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2019-11-05 DOI:10.1021/acsami.9b16539
Chen Dong, Shuyi Liu, Nilesh Barange, Jaewoong Lee, Tyler Pardue, Xueping Yi, Shichen Yin, Franky So*
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引用次数: 35

Abstract

Lead sulfide nanoparticles (PbS NPs) are used in the short-wavelength infrared photodetectors because of their excellent photosensitivity, band gap tunability, and solution processability. It has been a challenge to synthesize high-quality PbS NPs with an absorption peak beyond 2000 nm. In this work, using PbS seed crystals with an absorption peak at 1960 nm, we report a successful synthesis of very large monodispersed PbS NPs having a diameter up to 16 nm by multiple injections. The resulting NPs have an absorption peak over 2500 nm with a small full width at half-maximum of 24 meV. To demonstrate the applications of such large quantum dots (QDs), broadband heterojunction photodetectors are fabricated with the large PbS QDs of an absorption peak at 2100 nm. The resulting devices have an external quantum efficiency (EQE) of 25% (over 50% internal quantum efficiency) at 2100 nm corresponding to a responsivity of 0.385 A/W and an EQE of ~60% in the visible range.

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长波长硫化铅量子点传感高达2600纳米的短波红外光电探测器
硫化铅纳米颗粒(pbnps)因其优异的光敏性、带隙可调性和溶液可加工性而被广泛应用于短波红外探测器中。制备吸收峰超过2000 nm的高质量PbS纳米粒子是一个挑战。在这项工作中,我们报道了使用吸收峰在1960 nm的PbS种子晶体,通过多次注射成功合成了直径高达16 nm的非常大的单分散PbS NPs。所得NPs的吸收峰在2500nm以上,半峰宽度较小,为24mev。为了证明这种大量子点(QDs)的应用,用2100 nm吸收峰的大PbS量子点制作了宽带异质结光电探测器。该器件在2100 nm处具有25%的外部量子效率(EQE)(超过50%的内部量子效率),对应的响应率为0.385 a /W,在可见光范围内EQE为~60%。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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