{"title":"Design of dual linearly polarized, electrically small, low-profile, broadside radiating, Huygens source antenna","authors":"Zhentian Wu, M. Tang, R. Ziolkowski","doi":"10.1109/IWAT.2018.8379223","DOIUrl":null,"url":null,"abstract":"A design of electrically small, low-profile, dual linearly polarized (LP), Huygens source antenna with high isolation, and broadside radiation patterns with high front forward radiation and low back forward radiation, i.e., high front-to-back ratios (FTBRs), is presented. A prototype dual-LP antenna was fabricated, assembled, and tested. The measured results, in good agreement with their simulated values, confirm that it has an electrically small size (ka=0.904) and low profile (0.0483X0), with port isolation over 25.8 dB within its fractional impedance bandwidth (FBW), 0.46%, where |Sn|< −10 dB. When port 1 (port 2) is excited, the peak realized gain is 2.03 dBi (2.15 dBi) strictly along the broadside direction with the corresponding FTBR being 12.4 dB (12.1 dB).","PeriodicalId":212550,"journal":{"name":"2018 International Workshop on Antenna Technology (iWAT)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Workshop on Antenna Technology (iWAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWAT.2018.8379223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A design of electrically small, low-profile, dual linearly polarized (LP), Huygens source antenna with high isolation, and broadside radiation patterns with high front forward radiation and low back forward radiation, i.e., high front-to-back ratios (FTBRs), is presented. A prototype dual-LP antenna was fabricated, assembled, and tested. The measured results, in good agreement with their simulated values, confirm that it has an electrically small size (ka=0.904) and low profile (0.0483X0), with port isolation over 25.8 dB within its fractional impedance bandwidth (FBW), 0.46%, where |Sn|< −10 dB. When port 1 (port 2) is excited, the peak realized gain is 2.03 dBi (2.15 dBi) strictly along the broadside direction with the corresponding FTBR being 12.4 dB (12.1 dB).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
