Long-term potentiation mechanism of biological postsynaptic activity in neuro-inspired halide perovskite memristors

E. Hernández‐Balaguera, Laura Muñoz-Díaz, A. Bou, B. Romero, B. Ilyassov, Antonio Guerrero, J. Bisquert
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引用次数: 5

Abstract

Perovskite memristors have emerged as leading contenders in brain-inspired neuromorphic electronics. Although these devices have been shown to accurately reproduce synaptic dynamics, they pose challenges for in-depth understanding of the underlying nonlinear phenomena. Potentiation effects on the electrical conductance of memristive devices have attracted increasing attention from the emerging neuromorphic community, demanding adequate interpretation. Here, we propose a detailed interpretation of the temporal dynamics of potentiation based on nonlinear electrical circuits that can be validated by impedance spectroscopy. The fundamental observation is that the current in a capacitor decreases with time; conversely, for an inductor, it increases with time. There is no electromagnetic effect in a halide perovskite memristor, but ionic-electronic coupling creates a chemical inductor effect that lies behind the potentiation property. Therefore, we show that beyond negative transients, the accumulation of mobile ions and the eventual penetration into the charge-transport layers constitute a bioelectrical memory feature that is the key to long-term synaptic enhancement. A quantitative dynamical electrical model formed by nonlinear differential equations explains the memory-based ionic effects to inductive phenomena associated with the slow and delayed currents, invisible during the ‘off mode’ of the presynaptic spike-based stimuli. Our work opens a new pathway for the rational development of material mimesis of neural communications across synapses, particularly the learning and memory functions in the human brain, through a Hodgkin–Huxley-style biophysical model.
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神经激发卤化物钙钛矿记忆电阻器突触后生物活性的长期增强机制
钙钛矿记忆电阻器已成为脑启发神经形态电子学的主要竞争者。虽然这些装置已被证明可以准确地再现突触动力学,但它们对深入理解潜在的非线性现象提出了挑战。记忆器件电导率的增强效应引起了新兴神经形态学界越来越多的关注,需要充分的解释。在这里,我们提出了一个详细的解释,增强的时间动态基于非线性电路,可以通过阻抗谱验证。基本的观察是电容器中的电流随时间减小;相反,对于电感器,它随时间增加。在卤化物钙钛矿记忆电阻器中没有电磁效应,但离子-电子耦合产生了化学电感效应,这是增强特性背后的原因。因此,我们表明,在负瞬态之外,移动离子的积累和最终渗透到电荷传输层构成了生物电记忆特征,这是长期突触增强的关键。由非线性微分方程形成的定量动态电模型解释了基于记忆的离子效应对与缓慢和延迟电流相关的感应现象的影响,这些现象在突触前尖峰刺激的“关闭模式”期间是不可见的。我们的工作通过霍奇金-赫胥黎式的生物物理模型,为合理开发突触间神经通信的材料模拟,特别是人脑中的学习和记忆功能,开辟了一条新的途径。
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