Liu Ji-zhi, Zhang Qunhao, Yang Kai, Zeng Yaohui, Liu Zhiwei
{"title":"A Simple Method of Adjusting Trigger Voltage of HBT Device for ESD Protection","authors":"Liu Ji-zhi, Zhang Qunhao, Yang Kai, Zeng Yaohui, Liu Zhiwei","doi":"10.1109/IPFA.2018.8452175","DOIUrl":null,"url":null,"abstract":"The trigger voltage of the HBT device is important for ESD protection. A method of adjusting the trigger voltage of SiGe Heterojunction Bipolar Transistor (HBT) device is proposed in this paper. The simulation and experiment results show that the trigger voltage of HBT can be simply adjusted by varying the emitter junction area.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The trigger voltage of the HBT device is important for ESD protection. A method of adjusting the trigger voltage of SiGe Heterojunction Bipolar Transistor (HBT) device is proposed in this paper. The simulation and experiment results show that the trigger voltage of HBT can be simply adjusted by varying the emitter junction area.
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