D. Harame, A. Joseph, D. Coolbaugh, G. Freeman, K. Newton, S. Parker, R. Groves, M. Erturk, K. Stein, R. Volant, C. Dickey, J. Dunn, S. Subbanna, H. Zamat, V.S. Marangos, M. Doherty, O. Schreiber, T. Tanji, D. Herman, B. Meyerson
{"title":"The emerging role of SiGe BiCMOS technology in wired and wireless communications","authors":"D. Harame, A. Joseph, D. Coolbaugh, G. Freeman, K. Newton, S. Parker, R. Groves, M. Erturk, K. Stein, R. Volant, C. Dickey, J. Dunn, S. Subbanna, H. Zamat, V.S. Marangos, M. Doherty, O. Schreiber, T. Tanji, D. Herman, B. Meyerson","doi":"10.1109/ICCDCS.2002.1004075","DOIUrl":null,"url":null,"abstract":"SiGe BiCMOS technology is well suited for both wired and wireless communication areas. For the wired space, the key requirements are very high speed active devices, extremely accurate interconnect modeling (lumped elements and transmission lines), and the ability to do very highly integrated analog and mixed signal chips. With data rates at 40 Gb/s, the distinction between digital and analog circuits becomes blurred and low frequency models are no longer adequate. RF/Analog layouts and models are needed for all active devices. SiGe BiCMOS satisfies all these requirements.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
SiGe BiCMOS technology is well suited for both wired and wireless communication areas. For the wired space, the key requirements are very high speed active devices, extremely accurate interconnect modeling (lumped elements and transmission lines), and the ability to do very highly integrated analog and mixed signal chips. With data rates at 40 Gb/s, the distinction between digital and analog circuits becomes blurred and low frequency models are no longer adequate. RF/Analog layouts and models are needed for all active devices. SiGe BiCMOS satisfies all these requirements.
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