{"title":"A physical analytical model for LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices","authors":"R. Rao, T. C. Chong, L. Tan, W. S. Lau, J. Liou","doi":"10.1109/HKEDM.1999.836425","DOIUrl":null,"url":null,"abstract":"An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. Excellent agreement with experimental results is shown.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1999.836425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. Excellent agreement with experimental results is shown.
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