{"title":"Semiconductor optical amplifiers","authors":"J. Verdiell, M. Ziari, A. Mathur","doi":"10.1109/LEOS.1996.571522","DOIUrl":null,"url":null,"abstract":"Polarization insensitive semiconductor amplifiers are important devices for many applications. Their small size, high-gain, and ability to be turned on and off fast offer interesting possibilities for photonic switches. We have used a design to implement polarization insensitivity. Quantum wells of alternative compressive and tensile direction of strained are stacked up in the active region. Compressively strained layers provide TE gain through electron-heavy hole recombinations, while tensile strained wells provide predominantly TM gain through electron to light hole recombinations. Amplifiers can be fabricated at both 1.3 and 1.5 /spl mu/m wavelength.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.571522","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Polarization insensitive semiconductor amplifiers are important devices for many applications. Their small size, high-gain, and ability to be turned on and off fast offer interesting possibilities for photonic switches. We have used a design to implement polarization insensitivity. Quantum wells of alternative compressive and tensile direction of strained are stacked up in the active region. Compressively strained layers provide TE gain through electron-heavy hole recombinations, while tensile strained wells provide predominantly TM gain through electron to light hole recombinations. Amplifiers can be fabricated at both 1.3 and 1.5 /spl mu/m wavelength.