{"title":"Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology","authors":"M. Rosales, J. Polleux, C. Algani","doi":"10.1109/GROUP4.2011.6053777","DOIUrl":null,"url":null,"abstract":"We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50µm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10µm HPTs","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053777","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50µm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10µm HPTs
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