I. Chatterjee, B. Bhuva, peixiong zhao, B. Narasimham, J. K. Wang, B. Bartz, E. Pitta, M. Buer
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引用次数: 7
Abstract
Heavy-ion induced upsets are compared in dual-well and triple-well 40 nm CMOS SRAMs. Charge confinement in triple-well structures triggers the single-event upset reversal mechanism for high LET particles. Due to upset reversal, high LET ion-hits incident at off-normal angles show a decrease in SER compared to normally-incident ions for triple-well SRAM cells.
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