{"title":"Transition of memory technologies","authors":"Sangbum Kim, C. Lam","doi":"10.1109/VLSI-TSA.2012.6210112","DOIUrl":null,"url":null,"abstract":"Historically, transition of memory technologies has been enabled by not only disruptive new features of the memory technology but also new applications which proved the core value of those new features. As improvement of prevalent memory technologies is becoming more challenging, many resources have been devoted to development of emerging memory technologies. In this regard, characteristics of emerging memory technologies such as PCM, STT-MRAM, and RRAM will be reviewed to evaluate its potential of becoming transformational memory technology.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
Historically, transition of memory technologies has been enabled by not only disruptive new features of the memory technology but also new applications which proved the core value of those new features. As improvement of prevalent memory technologies is becoming more challenging, many resources have been devoted to development of emerging memory technologies. In this regard, characteristics of emerging memory technologies such as PCM, STT-MRAM, and RRAM will be reviewed to evaluate its potential of becoming transformational memory technology.
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