I/O Process Optimization to Cover Wide Range Operation Voltage

D. K. Pal, K. Sabri, M.T.L. Kee, Song Jin Yeong, Park Hyun Suck
{"title":"I/O Process Optimization to Cover Wide Range Operation Voltage","authors":"D. K. Pal, K. Sabri, M.T.L. Kee, Song Jin Yeong, Park Hyun Suck","doi":"10.1109/SMELEC.2006.380701","DOIUrl":null,"url":null,"abstract":"A process has been developed to cover wide range I/O operation voltage (1.8V to 3.3V) without changing the 3.3V I/O library at author's organization to meet the market demand by optimization of 3.3V process. The main emphasis is given on to improve the Idsat current from the baseline and maintain the Ioff comparable as 3.3V process. This process passed all device level reliability test. This process is used to fabricate wide range I/O operation voltage device at author's organization.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380701","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A process has been developed to cover wide range I/O operation voltage (1.8V to 3.3V) without changing the 3.3V I/O library at author's organization to meet the market demand by optimization of 3.3V process. The main emphasis is given on to improve the Idsat current from the baseline and maintain the Ioff comparable as 3.3V process. This process passed all device level reliability test. This process is used to fabricate wide range I/O operation voltage device at author's organization.
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覆盖大范围工作电压的I/O过程优化
在不改变作者单位3.3V I/O库的情况下,开发了一种覆盖大范围I/O工作电压(1.8V至3.3V)的工艺,通过优化3.3V工艺满足市场需求。主要的重点是提高基准的Idsat电流,并保持与3.3V工艺相当的Ioff。该进程通过了所有设备级可靠性测试。该工艺已在作者单位用于制造宽量程I/O操作电压装置。
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