Fully Integrated Dual-Channel Gate Driver and Area Efficient PID Compensator for Surge Tolerant Power Sensor Interface

Abstract

This paper presents a power sensor interface (PSI) driving a wide range of load valves with coil resistance ranging from 5 $\Omega$ to 62.5 $\Omega$. It can sustain voltage surges up to 115 V. An integrated high-voltage (HV) dual-channel gate driver with 8.7 ns deadtime (DT) is implemented to efficiently drive e-GaN FETs in a synchronous DC-DC buck converter. In addition, an area-optimization technique of on-chip passive components is proposed to enable full-integration of voltage-mode controller with 87% reduction in area. The achieved peak efficiency is 98.7% @ 4.67 A load. The feedback bandwidth is ~100 kHz to maintain fast transient response at 1MHz switching frequency. The settling time is < 70 $\mu\mathrm{s}$ and < 100 $\mu\mathrm{s}$ at load changes of −5.2 A and 5.2 A respectively. Overshoot (OS) and undershoot (US) voltages are within 2% of nominal VOUT. The layout of the gate driver and feedback control is implemented in $0.35-\mu\mathrm{m}$ HV CMOS process with active die area of 0.75 mm2.