{"title":"Back-etched super-junction LDMOST on SOI","authors":"S. Honarkhah, S. Nassif-Khalil, C. Salama","doi":"10.1109/ESSDER.2004.1356502","DOIUrl":null,"url":null,"abstract":"Conventional super junction LDMOSTs (SJLDMOSTs), fabricated on an SOI substrate, suffer from low breakdown voltage due to substrate-depletion effects. In this work, a back etched SJLDMOST (BSJLDMOST) on SOI is proposed to overcome this problem by eliminating the silicon substrate under the device. The electrical characteristics of the BSJLDMOST on a 0.8 /spl mu/m SOI film were investigated. The device with 15.5 /spl mu/m of SJ region exhibits a breakdown voltage of 317 V, a specific on-resistance of 48.3 m/spl Omega/cm/sup 2/ and a charge on-resistance figure of merit of 4.1 /spl Omega/nC. To verify the back etching concept and the suppression of the substrate depletion effect, super-junction diodes (BSJDs) were implemented. These diodes feature a threefold improvement in breakdown voltage over conventional super junction diodes (SJDs) implemented without removing the silicon substrate on the back of the device. A discussion of how the BSJLDMOST can be optimized to break the silicon limit is also provided.","PeriodicalId":287103,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDER.2004.1356502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 43
Abstract
Conventional super junction LDMOSTs (SJLDMOSTs), fabricated on an SOI substrate, suffer from low breakdown voltage due to substrate-depletion effects. In this work, a back etched SJLDMOST (BSJLDMOST) on SOI is proposed to overcome this problem by eliminating the silicon substrate under the device. The electrical characteristics of the BSJLDMOST on a 0.8 /spl mu/m SOI film were investigated. The device with 15.5 /spl mu/m of SJ region exhibits a breakdown voltage of 317 V, a specific on-resistance of 48.3 m/spl Omega/cm/sup 2/ and a charge on-resistance figure of merit of 4.1 /spl Omega/nC. To verify the back etching concept and the suppression of the substrate depletion effect, super-junction diodes (BSJDs) were implemented. These diodes feature a threefold improvement in breakdown voltage over conventional super junction diodes (SJDs) implemented without removing the silicon substrate on the back of the device. A discussion of how the BSJLDMOST can be optimized to break the silicon limit is also provided.
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