Superior Electronic and Dielectric Properties of Corrugated Electrochemically Reduced Graphene Over Graphene Oxide Papers

O. Dada, D. Villaroman
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引用次数: 13

Abstract

This work establishes that the frequency and temperature-dependent electronic and dielectric properties of electrochemically reduced graphene (ERGO) are higher than graphene oxide (GO) papers by 2 orders of magnitude. There is stronger polarization as a result of increased concentration of reduced clusters and thinning of graphene sheets in ERGO papers, first ever electrochemically reduced paper from GO. In GO, there is a greater dependence on frequency due to a higher percentage of interlayer O–H bonds. Dielectric permittivity increases with decreasing frequency due to stronger polarization and reduced conduction losses. At very high frequencies, greater conduction losses are responsible for lower values of dielectric permittivity of ERGO papers compared to GO papers. The “U” or “W” profile (σ vs T curves) of temperature dependent conductivity was due to thermally activated transport, residence time and ionic scattering of charge carriers. The recovery of conducting and dielectric properties at higher temperatures were due to the transition from graphene–ion–cloud to a graphene–air dielectric multi-nano-capacitor system. The latter had more sp2–carbon cluster concentration and increased electrical percolation supportive of band-like or variable range electron transport. Higher activation energies along ln σT vs T−1/2 plot are associated with delocalization of charge carriers from their potential wells, thermally activated carrier transport and frequency of the electronic field.
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波纹电化学还原石墨烯优于氧化石墨烯纸的电子和介电性能
这项工作确定了电化学还原石墨烯(ERGO)的频率和温度相关的电子和介电性能比氧化石墨烯(GO)纸张高2个数量级。由于还原团簇浓度的增加和ERGO纸中石墨烯薄片的变薄,出现了更强的极化,ERGO纸是第一次由氧化石墨烯电化学还原的纸。在氧化石墨烯中,由于层间O-H键的比例较高,因此对频率的依赖性更大。介质介电常数随着频率的降低而增加,这是由于极化增强和传导损耗减少。在非常高的频率下,与氧化石墨烯纸相比,更大的传导损失导致ERGO纸的介电常数值更低。温度依赖性电导率的“U”型或“W”型曲线(σ vs T曲线)是由载流子的热活化输运、停留时间和离子散射引起的。在高温下,导电性能和介电性能的恢复是由于石墨烯-离子云向石墨烯-空气介电多纳米电容器体系的转变。后者具有更高的sp2 -碳簇浓度和支持带状或可变范围电子传递的电渗透。沿ln σT vs T−1/2曲线的较高活化能与载流子从势阱的离域、热激活载流子输运和电场频率有关。
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