Highly rugged 1200 V 80 mQ 4-H SiC power MOSFET

Abstract

A novel 1200 V, 80 mΩ 4-H SiC power MOSFET with a shallow step p-body has been proposed for applications with highly rugged requirements. The innovative p-body design mitigates the problems arising due to the electric-field concentration at the corners that trigger the parasitic bipolar structure in conventional planar DMOS devices. TCAD simulations of the proposed device clearly demonstrate this improvement, along with significantly lower impact ionization rates at the corner of the p-body. The shallow step p-body approach, combined with a robust gate oxide and layout design, contributed to an industry-leading UIS capability of 2900 mJ of single pulse avalanche energy, and 5.8 μs of short circuit withstand time.