Liping Sun, Z. Ding, Desheng Guo, Lihao Yan, Chao Yan
{"title":"High efficiency high density telecom rectifier with GaN device","authors":"Liping Sun, Z. Ding, Desheng Guo, Lihao Yan, Chao Yan","doi":"10.1109/INTLEC.2015.7572401","DOIUrl":null,"url":null,"abstract":"Efficiency and power density are the two most important index of the telecom rectifier development. During recent years, the efficiency of the telecom rectifier is pushed from 92% to 96% and now 98%, this paper however explores the design considerations of super high density (100W/inch3) telecom rectifiers in concert with high efficiency requirements (96%). Specifically, the design considerations of a high switching frequency (1MHz) and high efficiency interleaving totem pole PFC stage with DCM boundary control followed by a high resonant frequency (500kHz), PCB winding based LLC DCDC stage is explained. The wide band device 650V GaN HEMT is used for both PFC stage and D2D stage. Experimental results are presented to validate the design concept to meet the power density and efficiency target.","PeriodicalId":211948,"journal":{"name":"2015 IEEE International Telecommunications Energy Conference (INTELEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Telecommunications Energy Conference (INTELEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTLEC.2015.7572401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
Efficiency and power density are the two most important index of the telecom rectifier development. During recent years, the efficiency of the telecom rectifier is pushed from 92% to 96% and now 98%, this paper however explores the design considerations of super high density (100W/inch3) telecom rectifiers in concert with high efficiency requirements (96%). Specifically, the design considerations of a high switching frequency (1MHz) and high efficiency interleaving totem pole PFC stage with DCM boundary control followed by a high resonant frequency (500kHz), PCB winding based LLC DCDC stage is explained. The wide band device 650V GaN HEMT is used for both PFC stage and D2D stage. Experimental results are presented to validate the design concept to meet the power density and efficiency target.
效率和功率密度是电信整流器发展的两个最重要的指标。近年来，电信整流器的效率从92%提高到96%，现在达到98%，但本文探讨了超高密度(100W/inch3)电信整流器的设计考虑，以满足高效率(96%)的要求。具体来说，解释了高开关频率(1MHz)和高效率交错图腾杆PFC级与DCM边界控制，然后是高谐振频率(500kHz)，基于PCB绕组的LLC DCDC级的设计考虑。宽带器件650V GaN HEMT用于PFC级和D2D级。实验结果验证了该设计理念能够满足功率密度和效率目标。
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