Fabrication and testing of 980nm high-power VCSEL with AlN film passivation layer

Abstract

We report the fabrication and the testing of a novel high-power VCSEL with AlN film passivation layer in this paper. The analysis on the high-power VCSEL show that the AlN film passivation layer can improve the opto-electric characteristics of high-power VCSEL, reduce the thermal resistance of VCSEL and enhance the ability of the heat dissipation; The AlN film passivation layer and the SiO2 film passivation layer high-power VCSEL both with the same aperture have been made by the same processes on the same epitaxial wafer; the two kinds of high power VCSEL have been tested comparatively, the testing results show that the out power of the VCSEL on AlN film passivation layer is 470mW at room temperature, its characteristic temperature is 120K, it have the much better temperature and opto-electric characteristics than the device on the SiO2 film passivation layer.