Hyeongdo Choi, Doohyung Cho, G. Song, Kwangsoo Kim
{"title":"A vertical power MOSFET with the extended trench oxide","authors":"Hyeongdo Choi, Doohyung Cho, G. Song, Kwangsoo Kim","doi":"10.1109/ELINFOCOM.2014.6914421","DOIUrl":null,"url":null,"abstract":"A vertical power MOSFET with the extended trench oxide is proposed. The key feature of this device structure is that the trench oxide, which is set in the side of the device, is extended to n+ substrate. This technique decreases the corner effect of oxide and improves the tradeoff between breakdown voltage (BV) and the specific on-resistance (Ron, sp). Silvaco T-CAD tool is used for the simulation to analyze characteristics of the device.","PeriodicalId":360207,"journal":{"name":"2014 International Conference on Electronics, Information and Communications (ICEIC)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Electronics, Information and Communications (ICEIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELINFOCOM.2014.6914421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A vertical power MOSFET with the extended trench oxide is proposed. The key feature of this device structure is that the trench oxide, which is set in the side of the device, is extended to n+ substrate. This technique decreases the corner effect of oxide and improves the tradeoff between breakdown voltage (BV) and the specific on-resistance (Ron, sp). Silvaco T-CAD tool is used for the simulation to analyze characteristics of the device.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
