{"title":"Study of the Impedance of the Bypassing Network of a Switching Cell – Influence of the Positioning of the Decoupling Capacitors","authors":"Y. Pascal, D. Labrousse, M. Petit, F. Costa","doi":"10.1109/IWIPP.2019.8799093","DOIUrl":null,"url":null,"abstract":"Mechanisms responsible for ringing and oscillations in power converters at transistors turn-offs are, first, studied using small signal modelling. It is explained why a 50% derating must be applied to high-speed transistors. Experimental measurements validate the analytical predictions. The influence of the distance between a switching cell and its decoupling capacitors is then studied; it appears that using a low-inductance – though simple – layout results in a stray inductance as low as 11 nH when the capacitor is 30 cm away from the switching cell, enabling degrees of freedom for thermal management.","PeriodicalId":150849,"journal":{"name":"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWIPP.2019.8799093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Mechanisms responsible for ringing and oscillations in power converters at transistors turn-offs are, first, studied using small signal modelling. It is explained why a 50% derating must be applied to high-speed transistors. Experimental measurements validate the analytical predictions. The influence of the distance between a switching cell and its decoupling capacitors is then studied; it appears that using a low-inductance – though simple – layout results in a stray inductance as low as 11 nH when the capacitor is 30 cm away from the switching cell, enabling degrees of freedom for thermal management.