{"title":"Wide bandgap (WBG) power devices and their impacts on power delivery systems","authors":"A. Huang","doi":"10.1109/IEDM.2016.7838457","DOIUrl":null,"url":null,"abstract":"Wide bandgap (WBG) power semiconductor devices have the capability to reach higher voltage, higher frequency and higher temperature compared with silicon based power devices. These capabilities have the potentials to revolutionize the way we deliver and manage power in the future. This paper reviews the WBG progress and their potential transformative impacts on low voltage, medium voltage and high voltage power delivery systems.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"35","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838457","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 35
Abstract
Wide bandgap (WBG) power semiconductor devices have the capability to reach higher voltage, higher frequency and higher temperature compared with silicon based power devices. These capabilities have the potentials to revolutionize the way we deliver and manage power in the future. This paper reviews the WBG progress and their potential transformative impacts on low voltage, medium voltage and high voltage power delivery systems.
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