SIM and TEM Micro-structure Observation of Defective Areas Determined by MO Imaging of YBCO-coated Conductors

H. Sasaki, T. Kato, Y. Sasaki, T. Hirayama, J. Matsuda, T. Izumi, Y. Shiohara, N. Kashima, S. Nagaya
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Abstract

Synopsis: We have developed a defect analysis procedure that combines a magneto-optical (MO) imaging system with scanning ion microscopy (SIM) and transmission electron microscopy (TEM). Low Ic areas of coated conductors were inspected using the MO imaging system. The defective area revealed in the MO image was prepared for cross-sectional SIM specimen using a focused Ga ion beam. The porous YBCO layers were found by SIM observation. Furthermore, defective areas were picked up using micro-sampling and then thinned using a focused Ga ion beam. TEM observation and energy dispersive X-ray spectroscopy indicated that the YBCO layers were composed of Y-rich phases and Ba-Cu-O.
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ybco涂层导体MO成像缺陷区的SIM和TEM微结构观察
摘要:我们开发了一种结合磁光(MO)成像系统与扫描离子显微镜(SIM)和透射电子显微镜(TEM)的缺陷分析程序。采用MO成像系统对涂层导体的低Ic区进行了检测。用聚焦的镓离子束制备了MO图像中显示的缺陷区域。通过SIM观察发现了多孔的YBCO层。此外,用微采样方法提取缺陷区域,然后用聚焦的镓离子束进行减薄。TEM观察和x射线能谱分析表明,YBCO层由富y相和Ba-Cu-O组成。
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