New criteria for the RDF induced drain current variation considering strain and transport effects in strain-silicon CMOS devices

Abstract

In this paper, we have studied the Id variation in linear and saturation region by considering the strain-induced effect and the carrier transport of strained CMOS devices. It was found that the origin of linear Id variation comes from the mobility scattering; while in saturation region, the Id variation is dominated by the injection velocity. The higher the injection velocity is, the smaller the saturation Id variation becomes. These results provide us a guideline for achieving good variability control of strain-based CMOS technologies.